Micron, Nanya to Start Production on 42nm Process in 2H 2010
February 12, 2010
US Micron Technology and Taiwan's Nanya
Technology jointly announced a 42nm process technology for the production of 2Gbit
DDR3 (Double Data Rate Three) memory products, EE Times reported on February 8.
With sampling slated for the second quarter, production using the 42nm process
technology is projected to follow in the second half of 2010. Nanya expects to
leverage the 42nm process technology to serve the server and PC market as well
as the consumer market. Both Nanya and Inotera Memories, a joint venture
between Nanya and Micron, are expected to adopt the 42nm process in the second
half. Furthermore, Nanya and Micron are currently developing a more advanced
30-nm process technology, according to the EE Times report.